Properties of corona charged plasma vapour deposited PTFE film
نویسندگان
چکیده
منابع مشابه
Properties of corona charged plasma vapour deposited PTFE fdm
Properties characterising charge storage in submicron polytetrafluoroethylene (PTFE) layer deposited by evaporation in a radio-frequency (RF) plasma are described in thls paper. X-ray difFraction (XRD) and scanning electron microscopy (SEM) investigations have shown that the method allows to deposit amorphous and uniform dielectric layers exhibiting resistivity at room temperature in the order ...
متن کاملCharge dynamic characteristics in corona-charged polytetrafluoroethylene film electrets.
In this work, the charge dynamics characteristics of injection, transport and decay in porous and non-porous polytetrafluoroethylene (PTFE) film electrets were investigated by means of corona charging, isothermal and thermal stimulating surface-potential decay measurements. The results showed that the initial surface potential, whether positively or negatively charging, is much higher in non-po...
متن کاملRaman bands in microwave plasma assisted chemical vapour deposited films
Raman spectroscopy is employed to characterize thin diamond films deposited by microwave plasma assisted chemical vapour deposition technique using a gas mixture of methane and hydrogen. The surface morphology of the films was analyzed by scanning electron microscopy. We have identified submicron crystals on (100) facets of diamond crystals which gave rise to bands in the Raman spectrum centred...
متن کاملPlasma diagnostics and device properties of AlGaN / GaN HEMT passivated with SiN deposited by plasma enhanced chemical vapour deposition ( PECVD )
In this work, silicon nitride thin films have been deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on both silicon samples and AlGaN/GaN High Electron Mobility Transistors (HEMT) grown on sapphire substrates. Commercial parallel-plate RF plasma equipment has been used. During depositions, the dissociation rates of SiH4 and NH3 precursors and the formation of H2 and N2 have been ...
متن کاملProperties of GZO thin film deposited at various positions in the plasma plume in PLD method
Ga-doped ZnO (GZO) thin films were prepared by pulsed laser deposition (PLD) method on a large substrate at room temperature in vacuum. Two regions of apparently different optical transmittance were found in the deposited area, and their properties such as thickness, sheet resistance, optical and electrical properties and composition ratio were measured. The transparent region has low sheet res...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Electrostatics
سال: 1997
ISSN: 0304-3886
DOI: 10.1016/s0304-3886(97)00059-4